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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor
Product specification Supersedes data of 2004 Jan 15 2004 Nov 04
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
FEATURES * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High efficiency leading to less heat generation. APPLICATIONS * Supply line switching circuits * Battery management applications * DC/DC converter applications * Strobe flash units * Medium power driver (e.g. relays, buzzers and motors). 1 DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. NPN complement: PBSS4540X. MARKING 2 3 PINNING PIN emitter collector base RCEsat QUICK REFERENCE DATA SYMBOL VCEO IC ICRP PARAMETER collector current (DC)
PBSS5540X
MAX. -4 -5 75
UNIT V A A m
collector-emitter voltage -40 repetitive peak collector current equivalent on-resistance
DESCRIPTION
2
TYPE NUMBER PBSS5540X Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China.
MARKING CODE(1) *1G
3 1
sym079
3
2
1
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5540X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89
2004 Nov 04
2
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO ICM ICRP IC IBM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current repetitive peak collector current collector current (DC) peak base current base current (DC) total power dissipation Tamb 25 C tp 10 ms; 0.2; note 1 - note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature - - - - -65 - -65 tp 1 ms CONDITIONS open emitter open base open collector tp 1 ms tp 10 ms; 0.2 - - - - - - - - MIN.
PBSS5540X
MAX. -40 -40 -6 -10 -5 -4 -2 -1 2.5 0.55 1 1.4 1.6 +150 150 +150
UNIT V V V A A A A A W W W W W C C C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
2004 Nov 04
3
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
PBSS5540X
1600 Ptot (mW) 1200
(2) (1)
001aaa229
800
(3)
400
0 -50
0
50
100
150 200 Tamb (C)
(1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint.
Fig.2 Power derating curves.
2004 Nov 04
4
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air notes 1 and 2 note 2 note 3 note 4 note 5 Rth(j-s) Notes 1. Pulse test: tp 10 ms; 0.2. thermal resistance from junction to soldering point
PBSS5540X
VALUE 50 225 125 90 80 16
UNIT K/W K/W K/W K/W K/W K/W
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated.
103 Zth (K/W) 102
(1) (2) (3) (4) (5) (6)
006aaa232
10
(7) (8) (9)
1
(10)
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; standard footprint. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
5
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
PBSS5540X
103 Zth (K/W)
(1)
006aaa233
102
(3) (5) (6)
(2) (4)
10
(7) (8) (9)
1
(10)
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
103 Zth (K/W) 102
(1) (2) (3) (4) (5) (6) (7) (8) (9)
006aaa234
10
1
(10)
10-1 10-5
10-4
10-3
10-2
10-1
1
10
102 tp (s)
103
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) = 1. (2) = 0.75. (3) = 0.5. (4) = 0.33. (5) = 0.2. (6) = 0.1. (7) = 0.05. (8) = 0.02. (9) = 0.01. (10) = 0.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Nov 04
6
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS VCB = -30 V; IE = 0 A VCB = -30 V; IE = 0 A; Tj = 150 C IEBO hFE emitter-base cut-off current DC current gain VEB = -5 V; IC = 0 A VCE = -2 V; IC = -0.5 A VCE = -2 V; IC = -1 A; note 1 VCE = -2 V; IC = -2 A; note 1 VCE = -2 V; IC = -5 A; note 1 VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -5 mA IC = -1 A; IB = -10 mA IC = -2 A; IB = -200 mA IC = -4 A; IB = -200 mA; note 1 IC = -5 A; IB = -500 mA; note 1 RCEsat VBEsat equivalent on-resistance base-emitter saturation voltage IC = -5 A; IB = -500 mA; note 1 IC = -4 A; IB = -200 mA; note 1 IC = -5 A; IB = -500 mA; note 1 VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. base-emitter turn-on voltage transition frequency collector capacitance VCE = -2 V; IC = -2 A VCE = -10 V; IC = -0.1 A; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - - 250 200 150 50 - - - - - - - - - 60 - MIN. - - - - - - - - - - - - 45 - - - - - TYP.
PBSS5540X
MAX. -100 -50 -100 - - - - 120 170 160 340 375 75 -1.1 -1.2 -1.0 - 105
UNIT nA A nA
mV mV mV mV mV m V V V MHz pF
2004 Nov 04
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Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
PBSS5540X
-8 IC (A) -6
(1) (2) (3)
001aaa157
-1.2 VBE (V) -0.8
(1) (2)
001aaa158
(4)
-4
(3) (5)
-0.4
-2
0 0
-0.5
-1
-1.5 VCE (V)
-2
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
(1) IB1 = -11 mA. (2) IB2 = -22 mA. (3) IB3 = -33 mA.
(4) IB4 = -44 mA. (5) IB5 = -55 mA.
VCE = -2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
Fig.6
Collector current as a function of collector-emitter voltage; typical values.
Fig.7
Base-emitter voltage as a function of collector current; typical values.
1000 hFE 800
001aaa159
102 RCEsat () 10
001aaa160
600
(1)
1 400
(2)
(2) 10-1 200
(3)
(1)
(3) 0 -10-1 10-2 -10-1
-1
-10
-102
-103 -104 IC (mA)
-1
-10
-102
-103 -104 IC (mA)
VCE = -2 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.8
DC current gain as a function of collector current; typical values.
Fig.9
Equivalent on-resistance as a function of collector current; typical values.
2004 Nov 04
8
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
PBSS5540X
-1 VCEsat (V) -10-1
(1)
001aaa161
-1 VCEsat (V) -10-1
(1) (2)
001aaa162
-10-2
(2)
(3)
-10-2
(3)
-10-3 -10-1
-1
-10
-102
-103 -104 IC (mA)
-10-3 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Tamb = 25 C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10.
Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values.
-10
001aaa163
-1.2 VBE (V) -0.8
001aaa164
VBEsat (V)
-1
(1) (2) (3)
-0.4
-10-1 10-1
-1
-10
-102
-103 -104 IC (mA)
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C.
Tamb = 25 C.
Fig.12 Base-emitter saturation voltage as a function of collector current; typical values.
Fig.13 Base-emitter voltage as a function of collector current; typical values.
2004 Nov 04
9
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
Reference mounting conditions
PBSS5540X
32 mm
handbook, halfpage
32 mm
10 mm
40 mm
2.5 mm 1 mm 3 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm
001aaa234
40 mm
10 mm
2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm
MLE322
Fig.14 FR4, standard footprint.
Fig.15 FR4, mounting pad for collector 1 cm2.
32 mm 30 mm
40 mm 2.5 mm 1 mm 0.5 mm
20 mm
5 mm 3.96 mm 1.6 mm
001aaa235
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Nov 04
10
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
PBSS5540X
SOT89
D
B
A
bp3
E
HE
Lp 1 2 bp2 wM bp1 e1 e 3 c
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 JEITA SC-62
EUROPEAN PROJECTION
ISSUE DATE 99-09-13 04-08-03
2004 Nov 04
11
Philips Semiconductors
Product specification
40 V, 5 A PNP low VCEsat (BISS) transistor
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
PBSS5540X
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2004 Nov 04
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Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp13
Date of release: 2004
Nov 04
Document order number:
9397 750 13893

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